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| 01/99 B-27 2N6550 N-Channel Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Absolute maximum ratings at TA =25C Reverse Gate Source & Reverse Gate Drain Voltage Continuious Forward Gate Current Continuous Device Power Dissipation Power Derating Junction Temperature (Operating & Storage) - 20 V 50 mA 400 mW 2.3 mW/C - 65C to +200C At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Leakage Current Zero Gate Voltage Drain Current (Pulsed) 2N6550 Min V(BR)GSS IGSS IDSS VGS(OFF) 10 - 0.3 100 - 20 -3 - 0.1 250 -3 Typ Max Unit V nA A mA V Process NJ450L Test Conditions IG = 10 A, VDS = OV VGS = - 10V, VDS = OV VGS = - 10V, VDS = OV VDS = 10V, VGS = O V VDS = 10V, ID = 0.1 mA TA = 85C Gate Source Cutoff Voltage Dynamic Electrical Characteristics Transconductance Common Source Output Conductance Common Source Input Capacitance gfs |Yos | Ciss 25 30 10 1.4 6 150 150 35 20 2 10 mS S pF pF nV/Hz nV/Hz Vrms pA/Hz VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, ID = 10 mA VDS = 10V, VDS = OV VDS = 5V, ID = 10 mA VDS = 5V, ID = 10 mA VDS = 5V, ID = 10 mA RS < 100 K f = 1 kHz f = 1 kHz f = 140 kHz f = 140 kHz f = 1 kHz f = 10 Hz f = 10 kHz to 20 kHz f = 1 kHz Common Source Reverse Transfer Capacitance Crss Equivalent Short Circuit Input Noise Voltage eN eN Total 0.4 0.1 0.6 Equivalent Open Circuit Input Noise Current N i TO46 Package Dimensions in Inches (mm) Pin Configuration 1 Drain, 2 Source, 3 Gate & Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 |
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